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Ordering number : ENA1830A
BFL4036
N-Channel Power MOSFET
500V, 14A, 0.52 Ω , TO-220F-3FS
Features
http://onsemi.com
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ON-resistance RDS(on)=0.4 Ω (typ.)
10V drive
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Input capacitance Ciss=1000pF (typ.)
Speci ? cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Symbol
VDSS
VGSS
Conditions
Ratings
500
±30
Unit
V
V
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *4
Avalanche Current *5
IDc*1
IDpack*2
IDP
PD
Tch
Tstg
EAS
IAV
Limited only by maximum temperature Tch=150 ° C
Tc=25 ° C (Our ideal heat dissipation condition)*3
PW ≤ 10 μ s, duty cycle ≤ 1%
Tc=25 ° C (Our ideal heat dissipation condition)*3
14
9.6
50
2.0
37
150
--55 to +150
109
14
A
A
A
W
W
° C
° C
mJ
A
Note : * 1 Shows chip capability
* 2 Package limited
* 3 Our condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
* 4 VDD=50V, L=1mH, IAV=14A (Fig.1)
* 5 L ≤ 1mH, single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Ordering & Package Information
unit : mm (typ)
7528-001
Device
BFL4036-1E
Package
TO-220F-3FS
SC-67
Shipping
50
pcs./tube
memo
Pb-Free
3.18
10.16
4.7
2.54
BFL4036-1E
Marking
Electrical Connection
2
1.47 MAX
0.8
2.76
FL4036
LOT No.
1
3
1
2
3
0.5
1 : Gate
2 : Drain
3 : Source
2.54
2.54
TO-220F-3FS
Semiconductor Components Industries, LLC, 2013
June, 2013
61213 TKIM TC-00002924/90810QB TK IM TC-00002470 No. A1830-1/6
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